The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes
AlGaN/GaN lateral Schottky barrier diodes (SBDs) with three different anode geometries (stripe, circular, and the conventional plane one) and different rows of anode trenches are fabricated and electrically characterized to study the influence of anode trench geometries. The SBDs with anode trenches...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-02-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/2/282 |