The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

AlGaN/GaN lateral Schottky barrier diodes (SBDs) with three different anode geometries (stripe, circular, and the conventional plane one) and different rows of anode trenches are fabricated and electrically characterized to study the influence of anode trench geometries. The SBDs with anode trenches...

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Bibliographic Details
Main Authors: Xiuxia Yang, Zhe Cheng, Zhiguo Yu, Lifang Jia, Lian Zhang, Yun Zhang
Format: Article
Published: MDPI AG 2020-02-01
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