High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

Abstract The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 1014 cm−2 and 1 × 1016 cm−2, the reverse breakdown voltage...

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Bibliographic Details
Main Authors: Yangyang Gao, Ang Li, Qian Feng, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Wenxiang Mu, Zhitai Jia, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2019-01-01
Series:Nanoscale Research Letters
Subjects:
β-Ga2O3 Schottky diode
Argon implantation
Edge termination
Online Access:http://link.springer.com/article/10.1186/s11671-018-2849-y

Internet

http://link.springer.com/article/10.1186/s11671-018-2849-y

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