High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

• Main Authors: Yangyang Gao, Ang Li, Qian Feng, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Wenxiang Mu, Zhitai Jia, Jincheng Zhang, Yue Hao
• Format: Article
• Language: English
• Published: SpringerOpen 2019-01-01
• Series: Nanoscale Research Letters
• Subjects: β-Ga2O3 Schottky diode; Argon implantation; Edge termination
• Online Access: http://link.springer.com/article/10.1186/s11671-018-2849-y

Abstract The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 1014 cm−2 and 1 × 1016 cm−2, the reverse breakdown voltage increases from 209 to 252 and 451 V (the maximum up to 550 V) and the Baliga figure-of-merit (VBR 2/Ron) also increases from 25.7 to 30.2 and 61.6 MW cm−2, about 17.5% and 140% enhancement, respectively. According to the 2D simulation, the electric fields at the junction corner are smoothed out after argon implantation and the position of the maximum breakdown electric filed, 5.05 MV/cm, changes from the anode corner at the interface to the overlap corner just under the implantation region. The temperature dependence of the forward characteristics was also investigated.