Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network

Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network

Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them. A method is proposed for recognizing and analyzing a dislocation structure of single crystal silicon carbide based on the use of optical micros...

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Bibliographic Details
Main Authors: A.V. Bragin, D.V. Pyanzin, R.I. Sidorov, D.A. Skvortsov
Format: Article
Language:English
Published: Samara National Research University 2020-08-01
Series:Компьютерная оптика
Subjects:
defective structure
dislocations
silicon carbide
image recognition
neural network
Online Access:http://computeroptics.smr.ru/KO/PDF/KO44-4/440420.pdf

Internet

http://computeroptics.smr.ru/KO/PDF/KO44-4/440420.pdf

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