Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding
In this paper, performances of a 4H-SiC UMOSFET with split gate and P+ shielding in different configurations are simulated and compared, with an emphasis on the switching characteristics and short circuit capability. A novel structure with the split gate in touch with the P+ shielding is proposed. T...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-03-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/13/5/1122 |