Smooth, low rate, selective GaN/AlGaN etch
The aluminum content is widely used in III-N semiconductors as a determiner of material etch characters. Applications consisting of thin GaN/AlGaN heterostructures can afford a maximum of 6 nm of a thin AlGaN layer over etch demand complex processes with precise low etch rates and low etched GaN sur...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0041148 |