Scalable manufacture of vertical p‐GaN/n‐SnO2 heterostructure for self‐powered ultraviolet photodetector, solar cell and dual‐color light emitting diode
Abstract Vertical SnO2 based p‐n junctions are pivotal since they built the core components in photoelectronic systems. Nevertheless, preparation of high‐quality p‐SnO2 with controllable hole mobility and concentration is still a great challenge owing to the self‐compensating effect and lattice dist...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-05-01
|
| Series: | InfoMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/inf2.12127 |