Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) technology by which Gallium Nitride (GaN) grows at low temperatures without ammonia gas. In this method, we investigated the effect of N2/H2 plasma on the GaN substrate surface cleaning pr...

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Bibliographic Details
Main Authors: Frank Wilson Amalraj, Arun Kumar Dhasiyan, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Nobuyuki Ikarashi, Masaru Hori
Format: Article
Language:English
Published: AIP Publishing LLC 2018-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5050819

Internet

http://dx.doi.org/10.1063/1.5050819

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