Selection of contact materials to p-type halide perovskite by electronegativity matching
The performance of perovskite optoelectronic devices depends critically on the contact between the active layer and charge transport materials. To reveal the mechanism of barrier formation on perovskite surfaces, we studied Schottky junctions between various metals and a p-type perovskite CsSnBr3. B...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-06-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0008406 |