Progress to a Gallium-Arsenide Deep-Center Laser

Progress to a Gallium-Arsenide Deep-Center Laser

Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known...

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Bibliographic Details
Main Author: Janet L. Pan
Format: Article
Language:English
Published: MDPI AG 2009-10-01
Series:Materials
Subjects:
laser action
stimulated emission
electroluminescence
hotoluminescence
gallium-arsenide
deep-centers
Online Access:http://www.mdpi.com/1996-1944/2/4/1599/

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http://www.mdpi.com/1996-1944/2/4/1599/

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