A modification of usual C–V measurement to more precisely characterize the band offsets in a-Si:H/c-Si heterojunctions
Due to a strong inversion layer at the a-Si:H/c-Si interface, there are errors in the determination of the band offsets by usual capacitance–voltage (C–V) measurements. An improved C–V measurement was presented to correct the errors by a modification to the apparent diffusion potential Vint. In this...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2015-01-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379715000571 |