Stress-Induced In Situ Modification of Transition Temperature in VO<sub>2</sub> Films Capped by Chalcogenide

Stress-Induced In Situ Modification of Transition Temperature in VO<sub>2</sub> Films Capped by Chalcogenide

We attempted to modify the monoclinic–rutile structural phase transition temperature (<i>T</i><sub>tr</sub>) of a VO<sub>2</sub> thin film in situ through stress caused by amorphous–crystalline phase change of a chalcogenide layer on it. VO<sub>2</sub>...

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Bibliographic Details
Main Authors: Joe Sakai, Masashi Kuwahara, Kunio Okimura, Yoichi Uehara
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Materials
Subjects:
vanadium oxide
chalcogenide
insulator-metal phase transition
phase change material
strain engineering
Online Access:https://www.mdpi.com/1996-1944/13/23/5541

Internet

https://www.mdpi.com/1996-1944/13/23/5541

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