Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor
A current improved and electric field reduced double-gate (DG) polycrystalline silicon thin-film transistor with two-step source/drain (DGTSD-TFT) design is proposed and demonstrated in this study. The two-step source/drain (TSD) design, which consists of a raised source/drain (RSD) area together wi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-04-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/9/4/233 |