ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

Abstract This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO2 on the polarization P and electrical characteristics of TaN/ZrO2/Ge capacitors and FeFETs, respectively. After the RTA ranging from 350 to 500 °C, TaN/ZrO2/Ge capacitors with 2.5 and 4 nm-thick amor...

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Bibliographic Details
Main Authors: Huan Liu, Yue Peng, Genquan Han, Yan Liu, Ni Zhong, Chungang Duan, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2020-05-01
Series:Nanoscale Research Letters
Subjects:
FeFET
ZrO2
Memory
Germanium
Amorphous
Online Access:http://link.springer.com/article/10.1186/s11671-020-03353-6

Internet

http://link.springer.com/article/10.1186/s11671-020-03353-6

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