Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes

Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes

The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-g...

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Bibliographic Details
Main Authors: Faraz Sadia Muniza, Jafri Syed Riaz un Nabi, Khan Hashim Raza, Shah Wakeel, Alvi Naveed ul Hassan, Wahab Qamar ul, Nur Omer
Format: Article
Language:English
Published: De Gruyter 2021-08-01
Series:Open Physics
Subjects:
zno nanorods
heterojunction
annealing
electrical characterization
interface states
Online Access:https://doi.org/10.1515/phys-2021-0053

Internet

https://doi.org/10.1515/phys-2021-0053

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