High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (<i>I</i><span style="font-variant: small-caps;">on</span>) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, G...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-01-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/10/2/77 |