Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition
This paper reports the effect of the cation composition on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) where atomic layer deposition (ALD) was used to deposit an a-IGZO channel layer. The In0.38Ga0.18Zn0.44O transistors at a 200°C annealing...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2019-04-01
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| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/15980316.2018.1540365 |