Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm...

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Bibliographic Details
Main Authors: Jonathan P. Hayton, Andrew R.J. Marshall, Michael D. Thompson, Anthony Krier
Format: Article
Language:English
Published: AIMS Press 2015-05-01
Series:AIMS Materials Science
Subjects:
photoluminescence
IMF
Interfacial Misfit Array
GaSb
AlGaSb
InGaSb
Quantum Well
MQW
Online Access:http://www.aimspress.com/Materials/article/211/fulltext.html

Internet

http://www.aimspress.com/Materials/article/211/fulltext.html

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