Large magnetoresistance effect in nitrogen-doped silicon
In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f) of 0.008...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4972795 |