Self-organization in irradiated semiconductor crystals caused by thermal annealing
Annealing of complex semiconductors GaP and CdP 2 , irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α -particles, was carried out and main electrical parameters (conductivity σ, carrier concentration n and mobility µ) as well as the positron li...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-07-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n2_2018/P130-133abstr.html |