Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN doubl...

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Bibliographic Details
Main Author: Masoud Sabaghi
Format: Article
Language:English
Published: Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte 2019-12-01
Series:Holos
Subjects:
silicon carbide polymorphss, 6h-sic, 3c-sic, 4h-sic, algan/gan, minimum noise figure (nfmin), double quantum well, high electron mobility transistors (hemts).
Online Access:http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192

Internet

http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192

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