Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN doubl...
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doaj-211418f874b8429f96f8aaae061ffeaa2020-11-25T02:51:19ZengInstituto Federal de Educação, Ciência e Tecnologia do Rio Grande do NorteHolos1807-16002019-12-012011410.15628/holos.2019.81922242Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTsMasoud Sabaghi0Photonics and Quantum Technologies Research School, Nuclear Science and Technology Research Institute, Tehran, IranAlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6H-SiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DC-HEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DC-HEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cut-off frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6H-SiC substrates are promising devices for future high-power and high-frequency electron device applications.http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192silicon carbide polymorphss, 6h-sic, 3c-sic, 4h-sic, algan/gan, minimum noise figure (nfmin), double quantum well, high electron mobility transistors (hemts). |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Masoud Sabaghi |
spellingShingle |
Masoud Sabaghi Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs Holos silicon carbide polymorphss, 6h-sic, 3c-sic, 4h-sic, algan/gan, minimum noise figure (nfmin), double quantum well, high electron mobility transistors (hemts). |
author_facet |
Masoud Sabaghi |
author_sort |
Masoud Sabaghi |
title |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_short |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_full |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_fullStr |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_full_unstemmed |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_sort |
analysis of silicon carbide polymorphs substrates effect on performances of algan/gan double quantum well hemts |
publisher |
Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte |
series |
Holos |
issn |
1807-1600 |
publishDate |
2019-12-01 |
description |
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6H-SiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DC-HEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DC-HEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cut-off frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6H-SiC substrates are promising devices for future high-power and high-frequency electron device applications. |
topic |
silicon carbide polymorphss, 6h-sic, 3c-sic, 4h-sic, algan/gan, minimum noise figure (nfmin), double quantum well, high electron mobility transistors (hemts). |
url |
http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192 |
work_keys_str_mv |
AT masoudsabaghi analysisofsiliconcarbidepolymorphssubstrateseffectonperformancesofalgangandoublequantumwellhemts |
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1724735266784018432 |