TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus
<p>In the present work, we develop a model for simulating an ultrathin body (10nm) and buried oxide (20nm) fully-depleted silicon-on-insulator MOSFET with SiO<sub>2</sub> gate oxide (5nm) by using <em>TCAD-Sentaurus</em> software. We performed DC-simulations for studyin...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Universidad San Francisco de Quito
2014-06-01
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| Series: | ACI Avances en Ciencias e Ingenierías |
| Subjects: | |
| Online Access: | http://revistas.usfq.edu.ec/index.php/avances/article/view/163 |