The influence of Mg doping on the nucleation of self-induced GaN nanowires
GaN nanowires were grown without any catalyst by plasma-assisted molecular beam epitaxy. Under supply of Mg, nanowire nucleation is faster, the areal density of wires increases to a higher value, and nanowire coalescence is more pronounced than without Mg. During nanowire nucleation the Ga desorptio...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3693394 |