Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
In this study, thin films of pure ZnO and doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrica...
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Nanoscience and Nanotechnology Research Center, University of Kashan
2017-07-01
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doaj-2193b1ca09e0434a93196f533eb23b522020-11-25T02:29:35ZengNanoscience and Nanotechnology Research Center, University of KashanJournal of Nanostructures2251-78712251-788X2017-07-017319419910.22052/jns.2017.03.00534332Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium ImpuritiesMohammad Hossein Manzari Tavakoli0Mehdi Ahmadi1Mohammad Sabet2Department of Physics, Faculty of Science, Vali-e-Asr University of Rafsanjan, Rafsanjan, IranDepartment of Physics, Faculty of Science, Vali-e-Asr University of Rafsanjan, Rafsanjan, IranDepartment of Chemistry, Faculty of Science, Vali-e-Asr University of Rafsanjan, Rafsanjan, IranIn this study, thin films of pure ZnO and doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrical, optical and structural properties. Concentration of all solution was 0.1M. The results show that the optimized layer is 0.5% GZO. By examining the transmittance spectrums we find that by doping the transparency of samples were improved and all samples in the visible areas 400-800nm are transparent. The electrical conductivity of all samples has been measured by four-point probe technique. The electrical conductivitys of pure ZnO sample and 0.5% GZO are 910-5 S/cm and 110-4 S/cm respectively. It can be a good choice for optoelectronic applications. Also X-ray diffraction results showed that diffraction peaks of 0.5% GZO sample have a small changes towards lower angles compared to the diffraction peaks of ZnO.http://jns.kashanu.ac.ir/article_34332_f11e335435757c078097430d9ecb1c46.pdfgzo layersol-gelspin coatingthin film |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Mohammad Hossein Manzari Tavakoli Mehdi Ahmadi Mohammad Sabet |
spellingShingle |
Mohammad Hossein Manzari Tavakoli Mehdi Ahmadi Mohammad Sabet Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities Journal of Nanostructures gzo layer sol-gel spin coating thin film |
author_facet |
Mohammad Hossein Manzari Tavakoli Mehdi Ahmadi Mohammad Sabet |
author_sort |
Mohammad Hossein Manzari Tavakoli |
title |
Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities |
title_short |
Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities |
title_full |
Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities |
title_fullStr |
Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities |
title_full_unstemmed |
Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities |
title_sort |
preparation and characterization of zno thin layers with various percentages of gallium impurities |
publisher |
Nanoscience and Nanotechnology Research Center, University of Kashan |
series |
Journal of Nanostructures |
issn |
2251-7871 2251-788X |
publishDate |
2017-07-01 |
description |
In this study, thin films of pure ZnO and doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrical, optical and structural properties. Concentration of all solution was 0.1M. The results show that the optimized layer is 0.5% GZO. By examining the transmittance spectrums we find that by doping the transparency of samples were improved and all samples in the visible areas 400-800nm are transparent. The electrical conductivity of all samples has been measured by four-point probe technique. The electrical conductivitys of pure ZnO sample and 0.5% GZO are 910-5 S/cm and 110-4 S/cm respectively. It can be a good choice for optoelectronic applications. Also X-ray diffraction results showed that diffraction peaks of 0.5% GZO sample have a small changes towards lower angles compared to the diffraction peaks of ZnO. |
topic |
gzo layer sol-gel spin coating thin film |
url |
http://jns.kashanu.ac.ir/article_34332_f11e335435757c078097430d9ecb1c46.pdf |
work_keys_str_mv |
AT mohammadhosseinmanzaritavakoli preparationandcharacterizationofznothinlayerswithvariouspercentagesofgalliumimpurities AT mehdiahmadi preparationandcharacterizationofznothinlayerswithvariouspercentagesofgalliumimpurities AT mohammadsabet preparationandcharacterizationofznothinlayerswithvariouspercentagesofgalliumimpurities |
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