Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities

In this study, thin films of pure ZnO and  doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrica...

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Main Authors: Mohammad Hossein Manzari Tavakoli, Mehdi Ahmadi, Mohammad Sabet
Format: Article
Language:English
Published: Nanoscience and Nanotechnology Research Center, University of Kashan 2017-07-01
Series:Journal of Nanostructures
Subjects:
Online Access:http://jns.kashanu.ac.ir/article_34332_f11e335435757c078097430d9ecb1c46.pdf
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spelling doaj-2193b1ca09e0434a93196f533eb23b522020-11-25T02:29:35ZengNanoscience and Nanotechnology Research Center, University of KashanJournal of Nanostructures2251-78712251-788X2017-07-017319419910.22052/jns.2017.03.00534332Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium ImpuritiesMohammad Hossein Manzari Tavakoli0Mehdi Ahmadi1Mohammad Sabet2Department of Physics, Faculty of Science, Vali-e-Asr University of Rafsanjan, Rafsanjan, IranDepartment of Physics, Faculty of Science, Vali-e-Asr University of Rafsanjan, Rafsanjan, IranDepartment of Chemistry, Faculty of Science, Vali-e-Asr University of Rafsanjan, Rafsanjan, IranIn this study, thin films of pure ZnO and  doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrical, optical and structural properties. Concentration of all solution was 0.1M. The results show that the optimized layer is 0.5% GZO. By examining the transmittance spectrums we find that by doping the transparency of samples were improved and all samples in the visible areas 400-800nm are transparent. The electrical conductivity of all samples has been measured by four-point probe technique. The electrical conductivitys of pure ZnO sample and 0.5% GZO are 910-5 S/cm and 110-4 S/cm respectively. It can be a good choice for optoelectronic applications. Also X-ray diffraction results showed that diffraction peaks of 0.5% GZO sample have a small changes towards lower angles compared to the diffraction peaks of ZnO.http://jns.kashanu.ac.ir/article_34332_f11e335435757c078097430d9ecb1c46.pdfgzo layersol-gelspin coatingthin film
collection DOAJ
language English
format Article
sources DOAJ
author Mohammad Hossein Manzari Tavakoli
Mehdi Ahmadi
Mohammad Sabet
spellingShingle Mohammad Hossein Manzari Tavakoli
Mehdi Ahmadi
Mohammad Sabet
Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
Journal of Nanostructures
gzo layer
sol-gel
spin coating
thin film
author_facet Mohammad Hossein Manzari Tavakoli
Mehdi Ahmadi
Mohammad Sabet
author_sort Mohammad Hossein Manzari Tavakoli
title Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
title_short Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
title_full Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
title_fullStr Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
title_full_unstemmed Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
title_sort preparation and characterization of zno thin layers with various percentages of gallium impurities
publisher Nanoscience and Nanotechnology Research Center, University of Kashan
series Journal of Nanostructures
issn 2251-7871
2251-788X
publishDate 2017-07-01
description In this study, thin films of pure ZnO and  doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrical, optical and structural properties. Concentration of all solution was 0.1M. The results show that the optimized layer is 0.5% GZO. By examining the transmittance spectrums we find that by doping the transparency of samples were improved and all samples in the visible areas 400-800nm are transparent. The electrical conductivity of all samples has been measured by four-point probe technique. The electrical conductivitys of pure ZnO sample and 0.5% GZO are 910-5 S/cm and 110-4 S/cm respectively. It can be a good choice for optoelectronic applications. Also X-ray diffraction results showed that diffraction peaks of 0.5% GZO sample have a small changes towards lower angles compared to the diffraction peaks of ZnO.
topic gzo layer
sol-gel
spin coating
thin film
url http://jns.kashanu.ac.ir/article_34332_f11e335435757c078097430d9ecb1c46.pdf
work_keys_str_mv AT mohammadhosseinmanzaritavakoli preparationandcharacterizationofznothinlayerswithvariouspercentagesofgalliumimpurities
AT mehdiahmadi preparationandcharacterizationofznothinlayerswithvariouspercentagesofgalliumimpurities
AT mohammadsabet preparationandcharacterizationofznothinlayerswithvariouspercentagesofgalliumimpurities
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