Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

We investigated the effects of GaN buffer resistance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on direct current (DC), low-frequency noise (LFN), and pulsed <i>I</i>-<i>V</i> characterization performances. The devices with the highest GaN buffer resistance were...

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Bibliographic Details
Main Authors: Ki-Sik Im, Jae-Hoon Lee, Yeo Jin Choi, Sung Jin An
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Crystals
Subjects:
AlGaN/GaN
HEMT
low-frequency noise
buffer resistance
current collapse
Online Access:https://www.mdpi.com/2073-4352/10/9/848

Internet

https://www.mdpi.com/2073-4352/10/9/848

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