Electronic materials with a wide band gap: recent developments

Electronic materials with a wide band gap: recent developments

The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV). This improved...

Full description

Bibliographic Details
Main Author: Detlef Klimm
Format: Article
Language:English
Published: International Union of Crystallography 2014-09-01
Series:IUCrJ
Subjects:
electronic materials
wide band gap materials
semiconductors
silicon
germanium
Online Access:http://scripts.iucr.org/cgi-bin/paper?S2052252514017229

Internet

http://scripts.iucr.org/cgi-bin/paper?S2052252514017229

Similar Items