Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, t...

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Bibliographic Details
Main Authors: Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN HEMT
passivation
accepter-like states
positive fixed charges
Online Access:https://ieeexplore.ieee.org/document/7857012/

Internet

https://ieeexplore.ieee.org/document/7857012/

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