Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, t...

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Main Authors: Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN HEMT
passivation
accepter-like states
positive fixed charges
Online Access:https://ieeexplore.ieee.org/document/7857012/
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spelling doaj-224a3509387c4cf98faecc2c2d37bf322021-03-29T18:45:11ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015317017410.1109/JEDS.2017.26691007857012Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTsShih-Chien Liu0https://orcid.org/0000-0003-4513-1824Chung-Kai Huang1Chia-Hua Chang2Yueh-Chin Lin3Bo-Yuan Chen4Szu-Ping Tsai5https://orcid.org/0000-0003-4775-542XBurhanuddin Yeop Majlis6Chang-Fu Dee7Edward Yi Chang8Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Chiao Tung University, Hsinchu, TaiwanInstitute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, MalaysiaInstitute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, MalaysiaDepartment of Materials Science and Engineering, National Chiao Tung University, Hsinchu, TaiwanAn effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, the net charge density at the AlGaN surface must equal to the 2DEG carrier density. Thus, the positive fixed charges passivation can increase the 2DEG carrier density and improve the switching performance of GaN MIS-HEMTs. In this paper, we demonstrated a high-density positive fixed charges (~2.71 &#x00D7; 10<sup>13</sup> e/cm<sup>-2</sup>) passivation using SiON for GaN MIS-HEMTs. The device with SiON passivation exhibits significant improvements in I-V characteristics and dynamic RON compared to the conventional SiN passivated device.https://ieeexplore.ieee.org/document/7857012/AlGaN/GaN HEMTpassivationaccepter-like statespositive fixed charges
collection DOAJ
language English
format Article
sources DOAJ
author Shih-Chien Liu
Chung-Kai Huang
Chia-Hua Chang
Yueh-Chin Lin
Bo-Yuan Chen
Szu-Ping Tsai
Burhanuddin Yeop Majlis
Chang-Fu Dee
Edward Yi Chang
spellingShingle Shih-Chien Liu
Chung-Kai Huang
Chia-Hua Chang
Yueh-Chin Lin
Bo-Yuan Chen
Szu-Ping Tsai
Burhanuddin Yeop Majlis
Chang-Fu Dee
Edward Yi Chang
Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
IEEE Journal of the Electron Devices Society
AlGaN/GaN HEMT
passivation
accepter-like states
positive fixed charges
author_facet Shih-Chien Liu
Chung-Kai Huang
Chia-Hua Chang
Yueh-Chin Lin
Bo-Yuan Chen
Szu-Ping Tsai
Burhanuddin Yeop Majlis
Chang-Fu Dee
Edward Yi Chang
author_sort Shih-Chien Liu
title Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
title_short Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
title_full Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
title_fullStr Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
title_full_unstemmed Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
title_sort effective passivation with high-density positive fixed charges for gan mis-hemts
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2017-01-01
description An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, the net charge density at the AlGaN surface must equal to the 2DEG carrier density. Thus, the positive fixed charges passivation can increase the 2DEG carrier density and improve the switching performance of GaN MIS-HEMTs. In this paper, we demonstrated a high-density positive fixed charges (~2.71 &#x00D7; 10<sup>13</sup> e/cm<sup>-2</sup>) passivation using SiON for GaN MIS-HEMTs. The device with SiON passivation exhibits significant improvements in I-V characteristics and dynamic RON compared to the conventional SiN passivated device.
topic AlGaN/GaN HEMT
passivation
accepter-like states
positive fixed charges
url https://ieeexplore.ieee.org/document/7857012/
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