Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is performed on mature AlGaN/GaN heterojunction...

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Bibliographic Details
Main Authors: Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN
InAlN/GaN
low voltage applications
RF power capability
Online Access:https://ieeexplore.ieee.org/document/9509586/

Internet

https://ieeexplore.ieee.org/document/9509586/

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