Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin molybdenum disulfide, boron nitride and graphene.

Bibliographic Details
Main Authors: Quoc An Vu, Yong Seon Shin, Young Rae Kim, Van Luan Nguyen, Won Tae Kang, Hyun Kim, Dinh Hoa Luong, Il Min Lee, Kiyoung Lee, Dong-Su Ko, Jinseong Heo, Seongjun Park, Young Hee Lee, Woo Jong Yu
Format: Article
Language:English
Published: Nature Publishing Group 2016-09-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms12725

Internet

https://doi.org/10.1038/ncomms12725

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