A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing the temperature in the forming process. However, th...

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Bibliographic Details
Main Authors: Yu-Ting Su, Hsi-Wen Liu, Po-Hsun Chen, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan, Cheng-Hsien Wu, Chih-Cheng Yang, Min-Chuan Wang, Shengdong Zhang, Hao Wang, Simon M. Sze
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Forming voltage
temperature
rising time
charge accumulation
1T1R
RRAM
Online Access:https://ieeexplore.ieee.org/document/8301397/

Internet

https://ieeexplore.ieee.org/document/8301397/

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