High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> HfO<sub>2</sub>-Based AlGaN/GaN MIS-HEMTs With Y<sub>2</sub>O<sub>3</sub> Interfacial Layer for High Gate Controllability and Interface Quality

High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> HfO<sub>2</sub>-Based AlGaN/GaN MIS-HEMTs With Y<sub>2</sub>O<sub>3</sub> Interfacial Layer for High Gate Controllability and Interface Quality

High-k HfO<sub>2</sub> has been widely adopted in Si based MOSFETs as gate dielectric for the superior control over gate leakage and channel electrostatics. However, in AlGaN/GaN HEMTs, the additional interface issue as well as high oxygen transparency of HfO<sub>2</sub> has...

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Bibliographic Details
Main Authors: Ya-Ting Shi, Wei-Zong Xu, Chang-Kun Zeng, Fang-Fang Ren, Jian-Dong Ye, Dong Zhou, Dun-Jun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">k</italic> HfO₂
Y₂O₃ interfacial layer
AlGaN/GaN MIS-HEMT
gate controllability
interface quality
Online Access:https://ieeexplore.ieee.org/document/8918313/

Internet

https://ieeexplore.ieee.org/document/8918313/

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