The Influence of the Preheating Temperature of the (−2 0 1) β-Ga<sub>2</sub>O<sub>3</sub> Substrates on c-Plane GaN Epitaxial Growth

The Influence of the Preheating Temperature of the (−2 0 1) β-Ga<sub>2</sub>O<sub>3</sub> Substrates on c-Plane GaN Epitaxial Growth

In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga<sub>2</sub>O<sub>3</sub> single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition meth...

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Bibliographic Details
Main Author: Yu-Pin Lan
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Coatings
Subjects:
β-Ga<sub>2</sub>O<sub>3</sub>
heterogeneous epitaxy
thermal annealing
GaN
epilayer
APMOCVD (atmospheric pressure metalorganic chemical vapor deposition)
Online Access:https://www.mdpi.com/2079-6412/11/7/824

Internet

https://www.mdpi.com/2079-6412/11/7/824

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