Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is s...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
L.N. Gumilyov Eurasian National University
2020-03-01
|
| Series: | Eurasian Journal of Physics and Functional Materials |
| Subjects: | |
| Online Access: | http://ephys.kz/index.php?view=article&id=193 |