Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application
The high dielectric constant ZrO<sub>2</sub>, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO<sub>2</sub> gate dielectric. The electri...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
|
| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/10/7/698 |