Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application
The high dielectric constant ZrO<sub>2</sub>, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO<sub>2</sub> gate dielectric. The electri...
Main Authors: | Junan Xie, Zhennan Zhu, Hong Tao, Shangxiong Zhou, Zhihao Liang, Zhihang Li, Rihui Yao, Yiping Wang, Honglong Ning, Junbiao Peng |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-07-01
|
Series: | Coatings |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-6412/10/7/698 |
Similar Items
-
Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device
by: Wei Cai, et al.
Published: (2019-01-01) -
Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator
by: Shangxiong Zhou, et al.
Published: (2018-05-01) -
The Dual Effects of Gate Dielectric Constant in Tunnel FETs
by: Hao Wang, et al.
Published: (2016-01-01) -
Novel Concept for High Dielectric Constant Composite Electrolyte Dielectrics
by: Fromille, Samuel S., IV
Published: (Sept) -
Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor
by: Zhihao Liang, et al.
Published: (2020-03-01)