Modeling electrical conduction in resistive-switching memory through machine learning
Traditional physical-based models have generally been used to model the resistive-switching behavior of resistive-switching memory (RSM). Recently, vacancy-based conduction-filament (CF) growth models have been used to model device characteristics of a wide range of RSM devices. However, few have fo...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0052909 |