Recent progress on the electronic structure, defect, and doping properties of Ga2O3
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable Ga2O3 a promising material for a large range of applications,...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5142999 |