3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
The integration of AlGaN/GaN thin film transistors onto diamond substrates enables the efficient dissipation of device heat, thus providing a boost in performance and reliability of current high-frequency GaN power amplifiers. In this paper, we show 3 GHz load-pull measurements of GaN transistors on...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-12-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5127579 |