3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond

3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond

The integration of AlGaN/GaN thin film transistors onto diamond substrates enables the efficient dissipation of device heat, thus providing a boost in performance and reliability of current high-frequency GaN power amplifiers. In this paper, we show 3 GHz load-pull measurements of GaN transistors on...

Full description

Bibliographic Details
Main Authors: Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla
Format: Article
Language:English
Published: AIP Publishing LLC 2019-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5127579

Internet

http://dx.doi.org/10.1063/1.5127579

Similar Items