Etching and ellipsometry studies on CL-VPE grown GaN epilayer
The surface morphological characteristics of wet chemical etched GaN layers grown at different temperatures on (0 0 0 1) sapphire substrates by Chloride-Vapor Phase Epitaxy (Cl-VPE) have been studied using optical microscope. Significant surface morphology changes have been observed in correlation t...
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| Format: | Article |
| Language: | English |
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Sciendo
2017-02-01
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| Series: | Materials Science-Poland |
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| Online Access: | https://doi.org/10.1515/msp-2017-0023 |