Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection

Gated Bow-Tie Diode for Microwave to Sub-Terahertz Detection

We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel...

Full description

Bibliographic Details
Main Authors: Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, Vladimir Umansky
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Sensors
Subjects:
voltage sensitivity
bow-tie diode
thermoelectric electromotive force
hot carriers
selectively doped semiconductor structure
field-effect transistor
microwave
terahertz frequency
Online Access:https://www.mdpi.com/1424-8220/20/3/829

Internet

https://www.mdpi.com/1424-8220/20/3/829

Similar Items