Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN

Analytical study of Metal-Insulator-Semiconductor contacts for both p- and n-InGaN

This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky's formation with doped InGaN is explained by exte...

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Bibliographic Details
Main Authors: Abdullah Al Mamun Mazumder, Md. Soyaeb Hasan, Ahmed I.M. Iskanderani, Md. Rafiqul Islam, Md. Tanvir Hasan, Ibrahim Mustafa Mehedi
Format: Article
Language:English
Published: Elsevier 2020-12-01
Series:Results in Physics
Subjects:
MIGS model
InGaN
MIS Contact
Barrier Height
Contact Resistivity
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379720321008

Internet

http://www.sciencedirect.com/science/article/pii/S2211379720321008

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