Study of structure and surface morphology of two-layer contact Ti/Al metallization
Ti/Al/Ni/Au metallization widely used in the technology of GaN base devices have a very important imperfection i.e. rough surface. There are different opinions about the causes of this imperfection: balling-up of molten aluminum or the appearance of intermetallic melt phases in the Au–Al system. To...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
Pensoft Publishers
2016-06-01
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Series: | Modern Electronic Materials |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916300603 |