Study of structure and surface morphology of two-layer contact Ti/Al metallization

Study of structure and surface morphology of two-layer contact Ti/Al metallization

Ti/Al/Ni/Au metallization widely used in the technology of GaN base devices have a very important imperfection i.e. rough surface. There are different opinions about the causes of this imperfection: balling-up of molten aluminum or the appearance of intermetallic melt phases in the Au–Al system. To...

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Bibliographic Details
Main Authors: Kirill D. Vanyukhin, Roman V. Zakharchenko, Nikolay I. Kargin, Mikhail V. Pashkov, Lev A. Seidman
Format: Article
Language:English
Published: Pensoft Publishers 2016-06-01
Series:Modern Electronic Materials
Subjects:
Ohmic contacts
Contact metallizations
GaN
Titanium-aluminum metallization
Electron beam deposition method
Thermal annealing of metallization
Online Access:http://www.sciencedirect.com/science/article/pii/S2452177916300603

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