Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical mode...

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Bibliographic Details
Main Authors: Ying Chang, Aixia Xiao, Rubing Li, Miaojing Wang, Saisai He, Mingyuan Sun, Lizhong Wang, Chuanyong Qu, Wei Qiu
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Crystals
Subjects:
Raman intensity
angle-resolved Raman
polarization Raman
uniaxial crystal 4H-SiC
Online Access:https://www.mdpi.com/2073-4352/11/6/626

Internet

https://www.mdpi.com/2073-4352/11/6/626

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