Dipole-induced modulation of effective work function of metal gate in junctionless FETs
In this work, a metal gate with a high effective work function (Weff) that is suitable for junctionless field-effect transistors (JLFETs) has been fabricated. Weff is modulated by inserting an Al interfacial layer with different thicknesses between the HfO2 dielectric layer and the Pt gate metal. Tr...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5143771 |