Bistable 1060-nm High-Power Single-Mode DFB Laser Diode
We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics ar...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2015-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7286715/ |