Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics ar...

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Bibliographic Details
Main Authors: Shaoyang Tan, Mengdie Sun, Dan Lu, Ruikang Zhang, Wei Wang, Chen Ji
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7286715/