The influence of Bi content on dielectric properties of Bi4–xTi3O12–1.5x ceramics

A kind of lead-free dielectric materials, such as the bismuth layered perovskite-type structure of Bi4–xTi3O12–1.5x (x=0.04,0.02,0,–0.02,–0.04), was prepared by the conventional solid-state method at 800∘C and sintered at 1100∘C. The variation of structure and electrical properties with different Bi...

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Bibliographic Details
Main Authors: Hui Gong, Xiying Ke, Shuqin Yang, Zhaozhi Li, Huyin Su, Cancan Zhang, Qian Luo, Qi Chen, Lingfang Xu, Yong Chen, Wei Wang
Format: Article
Language:English
Published: World Scientific Publishing 2017-06-01
Series:Journal of Advanced Dielectrics
Subjects:
Online Access:http://www.worldscientific.com/doi/pdf/10.1142/S2010135X17500217