Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates

Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates

The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation...

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Bibliographic Details
Main Authors: Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, Liwen Sang
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Applied Sciences
Subjects:
GaN
Schottky contact
vertical-type photodetectors
Online Access:https://www.mdpi.com/2076-3417/9/14/2895

Internet

https://www.mdpi.com/2076-3417/9/14/2895

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